| PART |
Description |
Maker |
| LH28F800SGH-L LH28F800SG-L |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
Sharp Corporation
Sharp, Corp.
|
| AL4CA02 AL4CA03 AL4CA01 AL4CA04 AL4CA05 |
512/ 1K/ 2K/ 4K/ 8K x 9 Asynchronous FIFOs 512 /000 / 2K / 4K 8K的9异步FIFO
|
AverLogic Technologies, Inc.
AverLogic Technologies, Corp.
|
| STK20C04 STK20C04-30 STK20C04-35 STK20C04-45 STK20 |
512 X 8 NON-VOLATILE SRAM, 30 ns, PDIP28
CMOS nvSRAM High Performance 512 x 8 Nonvolatile Static RAM 高性能的CMOS非易12 × 8非易失性静态RAM
|
List of Unclassifed Manufacturers
ETC[ETC]
SIMTEK
Electronic Theatre Controls, Inc.
|
| LH5496HU-80 LH5496U-80 LH5496HD-20 LH5496-20 LH549 |
CMOS 512 X 9 FIFO 512 × 9的CMOS先进先出
|
Sharp, Corp.
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
| CY14B108K-ZS25XI CY14B108K-ZS25XIT CY14B108K-ZS45X |
8 Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
| CY14C512I13 |
512-Kbit (64 K x 8) Serial (I2C) nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
| CY7C421-15AXC CY7C421-20VXC |
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 15 ns, PQFP32
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 20 ns, PDSO28
|
Cypress Semiconductor, Corp.
|
| CY7C429-30PC |
256/512/1K/2K/4K x 9 Asynchronous FIFO(508.06 k) 256/512/1K/2K/4K × 9异步FIFO08.06十一
|
Cypress Semiconductor, Corp.
|
| CY7C425-65PC CY7C425-25VI CY7C429-25JI CY7C421-65J |
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 15 ns, CDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 25 ns, CDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 65 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 25 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 15 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 1K X 9 OTHER FIFO, 25 ns, PDSO28
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 65 ns, PDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 1K X 9 OTHER FIFO, 30 ns, PDSO28
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AM29F040B-1 AM29F040B-120EC AM29F040B-120EE AM29F0 |
From old datasheet system
EEPROM,FLASH,512KX8,CMOS,DIP,32PIN,PLASTIC
4 Mbit (512 K x 8-Bit)
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
| S9736 |
CCD area image sensor 512 × 512 pixels, front-illuminated FFT-CCDs
CCD area image sensor 512 】 512 pixels, front-illuminated FFT-CCDs
|
Hamamatsu Corporation
|
